2SC2660A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESCRIPTION ・With TO-220 package ・Complement to type 2SA1133/1133A ・High VCEO ・Large PC APPLICATIONS ・Power amplifier applications ・TV vertical deflection applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SC2660 VCEO Collector-emitter voltage 2SC2660A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 180 6 2 3 30 150 -55~150 V A A W ℃ ℃ CONDITIONS Open emitter VALUE 200 150 V UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE PARAMETER Collector-emitter saturation voltage Base-emitter on voltage 2SC2660 V(BR)CEO Collector-emitter breakdown voltage 2SC2660A V(BR)CBO V(BR)EBO ICBO IEBO hFE-1 hFE-2 Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 VCB=200V;IE=0 VEB=4V; IC=0 IC=0.15A ; VCE=10V IC=0.4A ; VCE=10V IC=5mA ;IB=0 CONDITIONS IC=0.5A ;IB=50m A IC=0.4A ; VCE=10V 2SC2660 2SC2660A MIN TYP. MAX 1.0 1.0 UNIT V V 150 V 180 200 6 50 50 60 50 240 V V μA μA hFE-1 classifications Q 60-140 P 100-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2660 2SC2660A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3