Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4057
DESCRIPTION ・With TO-247 package ・High voltage;high speed ・Switching power transistor
・
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 600 450 7 8 16 4 8 80 150 -55~150 UNIT V V V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated voltage IC=4A ; VCE=5V IC=1mA ; VCE=5V IC=0.8A ; VCE=10V 10 5 20 CONDITIONS IC=0.2A; IB=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A MIN 450 TYP.
2SC4057
MAX
UNIT V
1.0 1.5
V V
0.1
mA
0.1
mA
MHz
Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=4A IB1=0.8A; IB2=1.6A VBB2=4V ,RL=37.5Ω 0.5 2.0 0.2 μs μs μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4057
Fig.2 Outline dimensions
3
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