2SC4242

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4242 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 450 400 8 7 14 2 40 150 -55~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.125 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4242 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 0.8 V Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.2 V μA μA Collector Cutoff Current VCB= 450V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 100 hFE DC Current Gain IC= 4A ; VCE= 5V 10 Switching times μs μs μs ton tstg tf Turn-on Time IC= 5A , IB1= -IB2=1A RL= 30Ω; VCC= 150V 1.0 Storage Time 2.5 Fall Time 0.5 isc Website：www.iscsemi.cn 2