2SC4437

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4437 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition color display ·Horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 5 16 3 PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 50 150 -55~150 ℃ ℃ W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4437 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICES ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0 IC=4A;IB=1A IC=4A;IB=1A VCE=1500V VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 8 4 6 MIN 800 5 1.5 1.0 10 1.0 TYP. MAX UNIT V V V mA μA mA Switching times tstg tf Storage time Fall time IC=4A;IB1=0.8A; IB2=-1.6A; VCC=250V 3.0 0.3 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4437 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4437 4