2SC4880

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4880 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1700 900 5 12 100 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4880 TYP. MAX UNIT V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ 900 V V(BR )EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=10A; IB=2.5 A 5.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=2.5 A 1.5 V ICES Collector cut-off current VCE=1700V;RBE=0 500 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=5V 8 40 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4880 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3