2SC5280

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High voltage ・Low saturation voltage ・High speed ・Bult-in damper diode APPLICATIONS ・High speed switching applications ・Horizontal deflection output for medium resolution display,color TV PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5280 Fig.1 simplified outline (TO-3P(H)IS) and symbol Maximum absolute ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 8 16 4 UNIT V V V A A A W ℃ ℃ 50 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat V(BR)EBO IEBO ICBO hFE-1 hFE-2 fT COB VF PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-base breakdown voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage CONDITIONS IC=6A;IB=1.5 A IC=6A;IB=1.5 A IE=400mA;IC=0 VEB=5V; IC=0 VCB=1500V; IE=0 IC=1 A ; VCE=5V IC=6A ; VCE=5V IE=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=6A 10 4 2 115 1.4 5 72 1.0 MIN 2SC5280 TYP. MAX 5 1.5 UNIT V V V 250 1 35 8.5 mA mA MHz pF 1.8 V Switching times tstg tf Storage time Fall time 4 0.2 6 0.5 μs μs ICP=6A;IB1(end)=1.2A fH=31.5kHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5280 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5280 4