2SD1037

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 DESCRIPTION ・With MT-200 package ・Excellent safe operating area ・High current capability APPLICATIONS ・For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ・ Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 120 6 30 180 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1037 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 120 V VCEsat VBEsat Collector-emitter saturation voltage IC=10 A;IB=1 A IC=10 A;IB=1 A 0.5 V Base-emitter saturation voltage 1.5 V μA μA ICBO Collector cut-off current VCB=80V; IE=0 5 IEBO Emitter cut-off current VEB=6V; IC=0 5 hFE DC current gain IC=10A ; VCE=4V 20 fT Transition frequency IC=1A ; VCE=4V 1.5 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 210 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1037 Fig.2 Outline dimensions 3