Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
·
2SD1063
DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Low collector saturation voltage ・Complement to type 2SB827 APPLICATIONS ・Universal high current switching as solenoid driving,high speed inverter and converter.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 7 14 60 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A; IB=0.4A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 50 60 6
2SD1063
TYP.
MAX
UNIT V V V
0.4 0.1 0.1 280
V mA mA
10
MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=2.0A; IB1=-IB2=0.2A VCC=20V;RL=10Ω 0.20 0.90 0.30 μs μs μs
hFE-1 Classifications Q 70-140 R 100-200 S 140-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1063
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1063
4
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