Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·High reliability. APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SD1710
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 50 150 -55~150 UNIT V V V A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1710
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA;IB=0
800
V
VCEsat VBEsat
Collector-emitter saturation voltage
IC=4.5A;IB=2A IC=4.5A;IB=2A
5.0
V
Base-emitter saturation voltage
1.5
V
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA μA
ICBO
Collector cut-off current
VCB=800V; IE=0
10
ICES
Collector cut-off current
VCE=1500V; RBE=0
1.0
mA
hFE
DC current gain
IC=0.5 A ; VCE=5V
10
40
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1710
Fig.2 Outline dimensions
3
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