2SD1793

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1793 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V (Min.) ·High Switching Speed APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCEO VCBO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continunous Collector Current-Peak Base Current-Continunous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 100 100 7 10 15 0.5 1.0 50 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 5A; IB= 10mA B 2SD1793 MIN TYP. MAX 1.5 2.0 0.1 0.1 5 UNIT V V mA mA mA VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT IC= 5A; IB= 10mA B VCB= 100V; IE= 0 VCE= 100V; IB= 0 VEB= 7V; IC= 0 IC= 5A, VCE= 3V IC= 1A; VCE= 10V 1500 20 30000 MHz Switching Times; Resistive Load Turn-On Time Storage Time Fall Time IC= 5A; IB1= 5mA; IB2= 10mA; VBB2= 4V; RL= 6Ω 2 12 5 μs μs μs ton ts tf isc Website：www.iscsemi.cn