2SD1886

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1886 DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・High reliability ・High speed APPLICATIONS ・Color TV horizontal deflection output. ・Color display horizontal deflection output. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 30 70 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1886 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 tf PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain Fall time CONDITIONS IC=6A;IB=1.2 A IC=6A;IB=1.2 A IC=100mA;IB=0 VEB=4V; IC=0 VCB=800V; IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=6A ; VCE=5V IC=6A;RL=33.3Ω; IB1=1.2A IB2=-2.4AVCC=200V 8 5 0.1 10 0.3 μs 800 1 10 1 MIN TYP. MAX 5 1.5 UNIT V V V mA μA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1886 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1886 4