2SD2016

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2016 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V APPLICATIONS ·Igniter, relay and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 0.5 A PC 25 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2016 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1.5mA B 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 1A; IB= 1.5mA B 2.0 V μA Collector Cutoff Current VCB= 200V; IE= 0 10 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 1A; VCE= 4V 1000 15000 fT Current-Gain—Bandwidth Product IE= -0.1A; VCE= 12V 90 MHz COB Output Capacitance VCB= 10V, ftest= 1MHz 40 pF isc Website：www.iscsemi.cn 2