2SD2101

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2101 DESCRIPTION ・With TO-220Fa package ・DARLINGTON APPLICATIONS ・Low frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 200 200 7 10 15 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2101 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO V(BR)CBO V(BR)CEO VCEO(SUS) VCE(sat-1) VCE(sat)-2 VBE(sat-1) VBE(sat-2) ICBO ICEO hFE PARAMETER Emitter-base breakdown voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IE=50mA; IC=0 IC=0.1mA; IC=0 IC=25mA;RBE=∞ IC=5A; L=5mH IC=5A ;IB=10mA IC=10A ;IB=100mA IC=5A ;IB=10mA IC=10A ;IB=100mA VCB=180V; IE=0 VCE=180V; RBE=∞ IC=5A ; VCE=3V 1500 MIN 7 200 200 170 1.5 3.0 2.0 3.5 10 50 TYP. MAX UNIT V V V V V V V V μA μA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2101 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3