2SD2300

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2300 DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・Built-in damper diode APPLICATIONS ・For color TV horizontal output deflection applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VEBO IC ICM IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Collector surge current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open collector VALUE 1500 6 5 6 16 50 150 -55~150 UNIT V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCE(sat) VBE(sat) ICES hFE tf VF PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Fall time Diode forward voltage CONDITIONS IE=350mA , IC=0 IC=4.5A ; IB=1.2A IC=4.5A ; IB=1.2A VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=4A ; IB1=0.8A; IB2≈-1.5A IF=6A MIN 6 2SD2300 TYP. MAX UNIT V 5.0 1.5 500 20 1.0 3.0 V V μA μs V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2300 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3