2SD288

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD288 DESCRIPTION ·With TO-220C package ·Collector-base voltage : VCBO=80V ·Collector dissipation : PC=25W(TC=25℃) APPLICATIONS ·Low frequency power amplifier ·Power regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 55 5 3 25 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD288 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 55 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA; IE=0 80 V V(BR)EBO Emitter-base breakdown votage IE=0.5mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1 A;IB=0.1 A 1.0 V μA μA ICBO Collector cut-off current VCB=50V; IE=0 50 IEBO Emitter cut-off current VEB=5V; IC=0 50 hFE DC current gain IC=0.5A ; VCE=5V 40 240 hFE classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD288 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD288 4