2SD717

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD717 DESCRIPTION ・With TO-3P(I) package ・Low collector saturation voltage ・High collector power dissipation APPLICATIONS ・High power switching applications ・DC-DC converter and DC-AC inverter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 70 50 5 10 2 80 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=70V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IC=1A ; VCE=4V IE=0 ; VCB=10V ;f=1MHz 70 30 10 350 MIN 50 TYP. 2SD717 MAX UNIT V 0.4 1.2 10 10 240 V V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=0.3A;RL=5Ω;VCC=30V 0.3 2.5 0.4 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD717 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3