BD158

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD158 DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min) ·DC Current Gain: hFE = 30~240(Min) @ IC= 50mA APPLICATIONS ·Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range VALUE 325 300 5 0.5 1.0 0.25 20 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Ti Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 6.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD158 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 B 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 325 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 1.0 V ICBO Collector Cutoff Current VCB= 325V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 50m A; VCE= 10V 30 240 isc Website：www.iscsemi.cn