BD243

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD243/A/B/C DESCRIPTION ・With TO-220C package ・Complement to type BD244/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD243 BD243A VCBO Collector-base voltage BD243B BD243C BD243 BD243A VCEO Collector-emitter voltage BD243B BD243C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 100 5 6 10 2 65 150 -65~150 V A A A W ℃ ℃ Open emitter 80 100 45 60 V CONDITIONS VALUE 45 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD243/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD243 BD243A IC=30mA; IB=0 BD243B BD243C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD243/A ICEO Collector cut-off current BD243B/C BD243 BD243A ICES Collector cut-off current BD243B BD243C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.3A ; VCE=4V IC=3A ; VCE=4V 30 15 1 mA VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.4 mA IC=6A;IB=1 A IC=6A ; VCE=4V VCE=30V; IB=0 0.7 mA 80 100 1.5 2.0 V V CONDITIONS MIN 45 60 V TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD243/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3