BD643

Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD644 ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD643 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 45 45 5 8 12 150 62.5 150 -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors BD643 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 VF fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Diode forward voltage Transition frequency CONDITIONS IC=0.1A, IB=0 IC=5mA, IE=0 IE=2mA, IC=0 IC=3A ,IB=12mA IC=3A , VCE=3V VCB=VCBMax; IE=02 VCE=1/2 VCEMax; IB=0 VEB=5V; IC=0 IC=0.5A ; VCE=3V IC=3A ; VCE=3V IC=6A ; VCE=3V IF=3A IC=3A;VCE=3V;f=1MHz 750 750 1.8 7 V MHz 1500 MIN 45 45 5 2.0 2.5 0.2 0.5 5 TYP. MAX UNIT V V V V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors PACKAGE OUTLINE BD643 Fig.2 Outline dimensions 3