BD652

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD651 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -140 -120 -5 -8 -12 -0.3 2 UNIT V V V A A A PC W 62.5 150 -65~150 ℃ ℃ TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 2 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD652 MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -120 V VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA B -2.0 V Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA B -2.5 V Base-Emitter Saturation Voltage IC= -5A; IB= -50mA B -3.0 V Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.5 V VCB= -120V; IE= 0 ICBO Collector Cutoff Current VCB= -70V; IE= 0; TC= 150℃ -0.2 mA -2.0 ICEO Collector Cutoff Current VCE= -60V; IB= 0 B -0.5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE DC Current Gain IC= -3A ; VCE= -3V 750 isc Website：www.iscsemi.cn 2