BD676A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type BD675A/677A/679A/681 ・DARLINGTON ・High DC current gain APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD676A/678A/680A/682 ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD676A BD678A VCBO Collector-base voltage BD680A BD682 BD676A BD678A VCEO Collector-emitter voltage BD680A BD682 VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -100 -5 -4 -6 -0.1 40 150 -65~150 V A A A W ℃ ℃ Open emitter -80 -100 -45 -60 V CONDITIONS VALUE -45 -60 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD676A BD678A BD676A/678A/680A/682 CONDITIONS MIN -45 -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 BD680A BD682 BD676A/678A/680A BD682 BD676A/678A/680A BD682 IC=-2A; IB=-40mA IC=-1.5A; IB=-30mA IC=-2A ; VCE=-3V -2.5 IC=-1.5A ; VCE=-3V VCB=rated BVCEO; IE=0 Ta=100 ℃ VCE=1/2rated BVCEO; IB=0 VEB=-5V; IC=0 BD676A/678A/680A IC=-2A ; VCE=-3V IC=-1.5A ; VCE=-3V 750 750 -0.2 -2.0 -0.5 -2.0 -80 -100 -2.8 V VCEsat Collector-emitter saturation voltage V -2.5 VBE(on) Emitter-base voltage Collector cut-off current Collector cut-off current Emitter cut-off current V ICBO ICEO IEBO mA mA mA hFE DC current gain BD682 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD676A/678A/680A/682 Fig.2 Outline dimensions 3