BDT82

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 ·Complement to Type BDT81/83/85/87 APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT82 BDT84 VCBO Collector-Base Voltage BDT86 BDT88 BDT82 BDT84 VCEO Collector-Emitter Voltage BDT86 BDT88 VEBO IC ICM IB B BDT82/84/86/88 VALUE -60 -80 UNIT V -100 -120 -60 -80 V -100 -120 -7 -15 -20 -4 125 150 -65~150 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT82 BDT84 IC= -30mA; IB= 0 BDT86 BDT88 VCE(sat)-1 VCE(sat)-2 VBE(on) ICES ICBO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= -5A; IB= -0.5A B BDT82/84/86/88 CONDITIONS MIN -60 -80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -100 -120 -1.0 -1.6 -1.5 -1 -0.2 -0.1 40 40 20 MHz V V V mA mA mA IC= -7A; IB= -0.7A B IC= -5A ; VCE= -4V VCE= 0.8VCBOmax; VBE= 0 VCB= VCBOmax; IE= 0 VEB= -7V; IC= 0 IC= -50mA ; VCE= -10V IC= -5A ; VCE= -4V IC= -0.5A ; VCE= -10V Switching Times ton toff Turn-On Time IC= -7A; IB1= -IB2= -0.7A Turn-Off Time 2 μs 1 μs isc Website：www.iscsemi.cn