BDX62C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX62 Collector-Base Voltage BDX62A BDX62B BDX62C BDX62 Collector-Emitter Voltage BDX62A BDX62B BDX62C VEBO IC ICM IB B BDX62/A/B/C VALUE -80 -100 UNIT VCBO V -120 -140 -60 -80 V -100 -120 -5 -8 -12 -0.15 90 200 -65~200 V A A A W ℃ ℃ VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX62 BDX62A IC= -100mA ;IB=0 BDX62B BDX62C VCE(sat) VBE(on) ICEO ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDX62 BDX62A ICBO Collector Cutoff Current BDX62B BDX62C IEBO hFE-1 hFE-2 hFE-3 COB Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance VCB= -60V;IE= 0;TJ= 200℃ VCB= -70V;IE= 0;TJ= 200℃ VEB= -5V; IC=0 IC= -0.5A ; VCE= -3V IC= -3A ; VCE= -3V IC= -8A ; VCE= -3V IE= 0 ; VCB= -10V; ftest= 1MHz IC= -3A; IB= -12mA B BDX62/A/B/C CONDITIONS MIN -60 -80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -100 -120 -2 -2.5 -0.2 -0.2 V V mA mA IC= -3A ; VCE= -3V VCE= 1/2VCEO; IB= 0 VCB= VCBOmax;IE= 0 VCB= -40V;IE= 0;TJ= 200℃ VCB= -50V;IE= 0;TJ= 200℃ -2 mA -5 1500 1000 750 100 mA pF Switching times ton toff Turn-on Time IC= -3A; IB1= -IB2= -12mA Turn-off Time 2.5 μs 0.5 μs isc Website：www.iscsemi.cn 2