BDX65A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65A DESCRIPTION ·With TO-3 package ·DARLINGTON ·Complement to type BDX64A APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 80 5 12 16 0.2 117 -55~200 -55~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE ICBO ICEO IEBO VF hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current Diode forward voltage DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0;L=25mH IC=5A ;IB=20mA IC=5A;VCE=3V VCB=60V; IE=0 TC=150℃ VCE=40V; IB=0 VEB=5V; IC=0 IF=3A IC=1A ; VCE=3V IC=5A ; VCE=3V IC=10A ; VCE=3V IC=5A ; VCE=3V 1000 1500 7 MHz 1.8 1500 MIN 80 2 3 0.4 3 1 5 TYP. MAX UNIT V V V mA mA mA V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDX65A Fig.2 Outline dimensions 3