BDX66

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66 DESCRIPTION ・With TO-3 package ・High current ・DARLINGTON APPLICATIONS ・Designed for power amplification and switching applications. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -5 -16 -20 -0.25 150 -55~200 -55~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0;L=25mH -60 V VCEsat ICBO Collector-emitter saturation voltage IC=-10A ;IB=-40mA VCB=-40V; IE=0 TC=150℃ VCE=-30V; IB=0 -2 -1 -5 -3 V Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 mA Switching times μs μs ton Turn-on time toff Turn-off time IC=-10A ; IB1=-IB2=0.04A VCC=12V ; 1.0 3.5 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX66 Fig.2 Outline dimensions 3