BDX95

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 60V(Min)- BDX91 80V(Min)- BDX93 100V(Min)- BDX95 ·Complement to Type BDX92/94/96 APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX91 VCBO Collector-Base Voltage BDX93 BDX95 BDX91 VCEO Collector-Emitter Voltage BDX93 BDX95 VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 60 80 100 60 80 100 5 10 15 90 200 -65~200 V A A W ℃ ℃ V V UNIT BDX91/93/95 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX91 V(BR)CEO Collector-Emitter Breakdown Voltage BDX93 BDX95 VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage BDX91 ICBO Collector Cutoff Current BDX93 BDX95 BDX91 ICEO Collector Cutoff Current BDX93 BDX95 IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= 3A; IB= 0.3A B BDX91/93/95 CONDITIONS MIN 45 TYP. MAX UNIT IC= 30mA ;IB=0 B 60 80 0.8 1.0 1.5 2.0 1.4 0.1 2.0 0.1 2.0 0.1 2.0 V V V V V V IC= 5A; IB= 1A B IC= 3A; IB= 0.3A B IC= 5A; IB= 1A B IC= 3A; VCE= 2V VCB= 60V; IE= 0 VCB= 30V; IE= 0; TC= 150℃ VCB= 80V; IE= 0 VCB= 40V; IE= 0; TC= 150℃ VCB= 100V; IE= 0 VCB= 50V; IE= 0; TC= 150℃ VCE= 60V;IB= 0 VCE= 80V;IB= 0 VCE= 100V;IB= 0 VEB= 5V; IC=0 IC= 3A; VCE= 2V IC= 5A; VCE= 2V IC= 1A; VCE= 10V 20 10 4 mA 0.2 mA 0.1 mA MHz Switching times ton toff Turn-on Time IC= 3A; IB1= -IB2= 0.3A Turn-off Time 2.0 μs 1.0 μs isc Website：www.iscsemi.cn 2