BDY76

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY76 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain: hFE= 40~120@IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 100 80 60 7 20 30 5 150 200 -65~200 UNIT V V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDY76 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 IC= 200mA; RBE=100Ω 60 V V(BR)CER Collector-Emitter Breakdown Voltage 70 V V(BR)CEX Collector-Emitter Breakdown Voltage IC= 200mA; VBE(off)= 1.5V IC= 10A; IB= 1A IC= 10A; VCE= 4V 80 V VCE(sat) VBE(on) ICEO Collector-Emitter Saturation Voltage 1.4 V Base-Emitter On Voltage 2.2 V Collector Cutoff Current VCE= 50V; IB= 0 B 10 5.0 10 5.0 10 5.0 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 30V; VBE(off)= 1.5V,TC=150℃ VCB= 100V; IE= 0 VCB= 30V; IE= 0,TC=150℃ VEB= 7V; IC= 0 mA ICBO Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE fT DC Current Gain IC= 10A; VCE= 4V IC= 1A; VCE= 4V 40 120 Current-Gain—Bandwidth Product 0.8 MHz isc Website：www.iscsemi.cn 2