BU100

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU100 DESCRIPTION ·With TO-3 package ·High voltage capability APPLICATIONS ·For horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=75℃ CONDITIONS Open emitter Open base Open collector VALUE 150 60 7 10 15 15 200 -55~200 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=8A ;IB=2.5A IC=8A ;IB=2.5A VCB=120V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz 40 0.1 MIN 60 150 7 TYP. BU100 MAX UNIT V V V 3.3 2.2 10 10 90 V V μA μA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU100 Fig.2 Outline dimensions 3