BU1508DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1508DF DESCRIPTION ·With TO-220Fa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Base current (peak) Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 7.5 8 15 4 6 35 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1508DF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 CC PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IE=600mA ;IC=0 IC=100mA ;IB=0;L=25mH IC=4.5A; IB=1.1A IC=4.5A; IB=1.7A VCE=rated;VBE=0 Tj=125℃ VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=4.5A ; VCE=1V IE=0;f=1MHz;VCB=10V 4.0 90 13 5.5 80 7.0 pF MIN 7.5 700 1.0 1.1 1.0 2.0 180 TYP. 13.5 MAX UNIT V V V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU1508DF Fig.2 Outline dimensions 3