Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2520AF
DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・ For use in horizontal deflection circuits of large screen colour TV receivers.
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 10 25 6 9 45 150 -65~150 UNIT V V V A A A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU2520AF
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V
VEBO
Emitter-base breakdown voltage
IB=1mA ;IC=0
7.5
13.5
V
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.2 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2 A VCE=BVCES; VBE=0 Tj=125℃ VEB=7.5V; IC=0
1.1 1.0 2.0 1.0
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
13
hFE-2
DC current gain
IC=6A ; VCE=5V
5
7
9.5
CC
Collector capacitance
IE=0; f=1MHz;VCB=10V
115
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2520AF
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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