BU2520DW

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520DW DESCRIPTION ・With TO-247 package ・High voltage,high speed ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current-peak Base Collector current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base CONDITIONS VALUE 1500 800 10 25 6 9 125 150 -65~150 UNIT V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2520DW TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A VCE=BVCES; VBE=0 TC=125℃ VEB=7.5V; IC=0 100 1.1 1.0 2.0 300 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1.0A ; VCE=5V 13 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 9.5 VF Diode forward voltage IF=6A 2.2 V CC Collector capacitance f=1MHz;VCB=10V 115 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2520DW Fig.2 Outline dimensions 3