Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2520DW
DESCRIPTION ・With TO-247 package ・High voltage,high speed ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current-peak Base Collector current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base CONDITIONS VALUE 1500 800 10 25 6 9 125 150 -65~150 UNIT V V A A A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU2520DW
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
13.5
V
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A VCE=BVCES; VBE=0 TC=125℃ VEB=7.5V; IC=0 100
1.1 1.0 2.0 300
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=1.0A ; VCE=5V
13
hFE-2
DC current gain
IC=6A ; VCE=5V
5
7
9.5
VF
Diode forward voltage
IF=6A
2.2
V
CC
Collector capacitance
f=1MHz;VCB=10V
115
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2520DW
Fig.2 Outline dimensions
3
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