BU2525AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2525AF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base VALUE 1500 800 12 30 8 12 45 150 -65~150 UNIT V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2525AF TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=8A ;IB=1.6 A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6 A VCE=BVCES; VBE=0 Tj=125℃ VEB=7.5V; IC=0 1.1 1.0 2.0 1.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=0.1A ; VCE=5V 13 hFE-2 CC DC current gain IC=8A ; VCE=5V IE=0; f=1MHz;VCB=10V 5 7 9.5 Collector capacitance 145 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2525AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3