BU2708DX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2708DX DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Collector-Emitter Voltage 825 V VEBO Emitter-Base Voltage 7.5 V IC ICM Collector Current- Continuous 8 A Collector Current-Peak 15 A IB B Base Current- Continuous 4 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 6 A PC 45 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -65~150 SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2708DX TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1.33A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1.33A B 1.0 1.0 2.0 15 V ICES Collector Cutoff Current VCE= 1700V ; VBE= 0 VCE= 1700V ; VBE= 0; TC=125℃ IC= 1A ; VCE= 5V mA hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 4A ; VCE= 1V 3 7.3 VECF C-E Diode Forward Voltage IF= 4A 1.6 V isc Website：www.iscsemi.cn 2