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BU931RPFI

BU931RPFI

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    BU931RPFI - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
BU931RPFI 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU931RPFI DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-peak Base Current Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 450 400 5 15 30 1 5 60 150 -40~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.08 UNIT ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU931RPFI TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH 400 V VCE(sat)-1 V CE(sat)-2 V CE(sat)-3 VBE(sat)-1 V BE(sat)-2 ICES Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA B 1.6 V Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA B 1.8 V Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V Base-Emitter Saturation Voltage IC= 10A; IB= 250mA VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125℃ VCE= 400V;IB= 0 2.2 1.0 5.0 1.0 V Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA hFE VECF DC Current Gain IC= 5A; VCE= 10V IF= 10A 300 C-E Diode Forward Voltage 2.8 V isc Website:www.iscsemi.cn
BU931RPFI 价格&库存

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