BU941ZPFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU941ZPFI DESCRIPTION ・With TO-3PML package ・DARLINGTON ・High breakdown voltage APPLICATIONS ・High ruggedness electronic ignitions PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open base Open collector VALUE 350 5 15 30 1 5 65 175 -65~175 UNIT V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 2.3 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACT ERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU941ZPFI TYP. MAX UNIT VCL Clamping voltage IC=0.1 A ;IB=0 350 500 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=100m A IC=10A; IB=250m A 1.8 V Collector-emitter saturation voltage 1.8 V VCEsat-3 Collector-emitter saturation voltage IC=12A; IB=300m A 2.0 V VBEsat-1 Base-emitter saturation voltage IC=8A; IB=100m A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=10A; IB=250m A 2.5 V VBEsat-3 Base-emitter saturation voltage IC=12A; IB=300m A VCE=300V; IB=0 TC=125℃ VEB=5V; IC=0 2.7 0.1 0.5 20 V ICEO IEBO Collector cut-off current mA Emitter cut-off current mA hFE DC current gain IC=5A ; VCE=10V 300 VF Diode forward voltage IF=10A 2.5 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU941ZPFI Fig.2 outline dimensions 3