BUS22B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS22B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS22B 450V (Min)-BUS22C APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUS22B BUS22C BUS22B BUS22C VEBO IC ICM IB B MAX 750 UNIT VCES Collector- Emitter Voltage(VBE= 0) V 850 400 V 450 9 8 20 4 6 125 200 -65~200 V A A A A W ℃ ℃ VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.4 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUS22B VCEO(SUS) Collector-Emitter Sustaining Voltage BUS22C BUS22B VCE(sat) Collector-Emitter Saturation Voltage BUS22C BUS22B VBE(sat) Base-Emitter Saturation Voltage BUS22C ICES IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC= 6A; IB= 1A B BUS22B/C CONDITIONS MIN 400 TYP. MAX UNIT IC= 0.1A ; IB= 0; L= 25mH 450 IC= 6A; IB= 0.8A B V 1.5 V 1.5 1.5 V 1.5 1 10 18 mA mA IC= 6A; IB= 1A B IC= 6A; IB= 0.8A B VCE=VCESMmax; VBE= 0 VEB= 9V; IC= 0 IC= 1A ; VCE= 5V Switching Times , Resistive Load ton tstg tf Turn-On Time For BUS22B IC= 6A ;IB1= -IB2= 0.8A Storage Time For BUS22C IC= 6A ;IB1= -IB2= 1A Fall Time 0.3 3.0 μs μs 0.5 μs isc Website：www.iscsemi.cn