BUS24B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS24B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS24B 450V (Min)-BUS24C APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUS24B BUS24C BUS24B BUS24C VEBO IC ICM IB B MAX 850 UNIT VCES Collector- Emitter Voltage(VBE= 0) V 1000 400 V 450 9 30 50 6 10 250 200 -65~200 V A A A A W ℃ ℃ VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.7 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUS24B VCEO(SUS) Collector-Emitter Sustaining Voltage BUS24C BUS24B VCE(sat) Collector-Emitter Saturation Voltage BUS24C BUS24B VBE(sat) Base-Emitter Saturation Voltage BUS24C ICES IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC= 20A; IB= 3.34A VCE=VCESMmax; VBE= 0 VEB= 9V; IC= 0 IC= 3A ; VCE= 5V IC= 20A; IB= 3.34A IC= 20A; IB= 2.66A IC= 20A; IB= 2.66A IC= 0.1A ; IB= 0; L= 25mH 450 CONDITIONS MIN 400 BUS24B/C TYP. MAX UNIT V 1.5 V 1.5 1.5 V 1.5 1 10 25 mA mA Switching Times , Resistive Load ton tstg tf Turn-On Time For BUS24B IC= 20A ;IB1= -IB2= 2.66A Storage Time For BUS24C IC= 20A ;IB1= -IB2= 3.34A Fall Time 0.7 4.5 μs μs 1.0 μs isc Website：www.iscsemi.cn