INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT11APX
DESCRIPTION ·High Voltage ·High Speed Switching
·
APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range
VALUE 1000 450 9 5 10 2 4 32 150 -65~150
UNIT V V V A A A A W ℃ ℃
IBM PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.95 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 hFE-3 hFE-4 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IC= 3A; IB= 0.6A
B
BUT11APX
MIN 450
TYP.
MAX
UNIT V
1.5 1.3 1.0 2.0 10 10 14 10 8 35 35 17 12
V V mA mA
IC= 2.5A; IB= 0.33A VCE= 1000V; VBE= 0 VCE= 1000V; VBE= 0; Tj= 125℃ VEB= 9V; IC= 0 IC= 5mA; VCE= 5V IC= 0.5A; VCE= 5V IC= 2.5A; VCE= 5V IC= 3.5A; VCE= 5V
Switching Times; Resistive Load Turn-on Time Storage Time Fall Time IC= 2.5A; IB1= -IB2= 0.5A; RL= 75Ω; VBB2= 4V 0.7 4.0 0.45 μs μs μs
ton ts tf
isc Website:www.iscsemi.cn
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