BUV48CFI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV48CFI DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25℃) SYMBOL VCER VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage (RBE= 10Ω) Collector-Emitter Voltage (VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak tp< 5ms Base Current-Continuous Base Current-peak tp< 5ms Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1200 1200 700 7 15 30 4 20 65 150 -65~150 UNIT V V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCER(SUS) VCE(sat)-1 VCE (sat)-2 VBE(sat)-1 VBE(sat)-2 ICER ICES ICEO IEBO PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current CONDITIONS IC= 100mA; IB= 0 IC= 0.5A; L= 2mH; Vclamp= 1200V RBE= 10Ω IC= 6A; IB= 1.5A B BUV48CFI MIN 700 1200 MAX UNIT V V 1.5 3.0 1.5 2.0 0.5 4.0 0.5 3.0 1.0 1.0 V V V V mA mA mA mA IC= 10A; IB= 4A IC= 6A; IB= 1.5A B IC= 10A; IB= 4A VCE= 1200V; RBE= 10Ω VCE= 1200V; RBE= 10Ω; TC=125℃ VCE= 1200V; VBE= 0 VCE= 1200V; VBE= 0; TC=125℃ VCE= 700V; IB= 0 VEB= 6V; IC= 0 Switching times Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 6A; IB1=-IB2= 1.5A; VCC= 250V 1.0 3.0 0.7 μs μs μs isc Website：www.iscsemi.cn