MOC8107X

MOC8106X, MOC8107X, MOC8108X MOC8106, MOC8107, MOC8108 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS UL recognised, File No. E91231 Package Code " EE " 'X' SPECIFICATIONAPPROVALS VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The MOC8106, MOC8107, MOC8108 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. High Isolation Voltage (5.3kVRMS ,7.5kVPK ) Base pin unconnected for improved noise immunity in high EMI environment APPLICATIONS DC motor controllers Industrial systems controllers Signal transmission between systems of different potentials and impedances 3.0 0.5 2.54 7.0 6.0 1.2 7.62 6.62 Dimensions in mm 6 1 2 5 3 4 7.62 4.0 3.0 0.5 3.35 0.26 13° Max ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 120mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 1.4 0.9 OPTION SM SURFACE MOUNT OPTION G 70V 7V 160mW 7.62 1.2 0.6 10.2 9.5 0.26 10.16 Total Power Dissipation 200mW (derate linearly 2.94mW/°C above 25°C) ISOCOMCOMPONENTSLTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 18/2/09 DA92586 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Output Collector Current IC (CTR) ( Note 2&3 ) MOC8106 MOC8107 MOC8108 Collector-emitter SaturationVoltageVCE (SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Turn-on Time ton Turn-off Time toff Output Rise Time tr Output Fall Time tf Note 1 Note 2 Note 3 5300 7500 5x1010 7.5 5.7 3.2 4.7 20 20 MIN 1.0 6 TYP MAX 1.15 1.5 10 70 6 1.0 50 UNITS TEST CONDITION V V μA V V nA IF = 10mA IR = 10μA VR = 6V IC = 1mA IE = 100μA VCE = 10V Output Coupled 5.0(50) 10(100) 25(250) 0.15 15(150) mA(%) 30(300) mA(%) 60(600) mA(%) 0.4 V VRMS VPK Ω μs μs μs μs 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE 5mA IF , 0.5mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 10V , IC = 2mA, RL = 100Ω Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. Production testing - limits verified with pulse test 18/2/09 D A92586 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) Collector Current vs. Collector-emitter Voltage 50 TA = 25°C 50 30 20 15 20 10 0 10 IF = 5mA 150 Collector current IC (mA) 40 30 100 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Collector-emitter saturation voltage VCE(SAT) (V) 0 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) IF = 5mA IC = 0.5mA 80 70 Forward current IF (mA) 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 Relative current transfer ratio IF = 10mA VCE = 10V 1.0 0.5 0 -30 0 25 50 75 100 D A92586 Ambient temperature TA ( °C ) 18/2/09