IXFP72N30X3

IXFP72N30X3 IXFQ72N30X3 IXFH72N30X3 X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalance Rated VDSS ID25 = 300V = 72A  19m  RDS(on) D TO-220 (IXFP) G S G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 72 A IDM TC = 25C, Pulse Width Limited by TJM 150 A IA TC = 25C 36 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 390 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 3.0 5.5 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-220 TO-3P TO-247 D (Tab) TO-3P (IXFQ) G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)    V 4.5 © 2019 IXYS CORPORATION, All Rights Reserved Applications 100 nA  A A  19 m  5 750 TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 V 15 High Power Density Easy to Mount Space Savings   Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100853C(11/19) IXFP72N30X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 36 RGi Gate Input Resistance Ciss Coss 60 S 1.7  5400 pF 800 pF 2 pF 310 1200 pF pF 22 ns 25 ns 86 ns 11 ns 82 nC 25 nC 25 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXFQ72N30X3 IXFH72N30X3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.32 C/W RthJC RthCS TO-220 TO-247 & TO-3P 0.50 0.25 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 72 A Repetitive, pulse Width Limited by TJM 288 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 36A, -di/dt = 100A/μs 100 750 15 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP72N30X3 IXFQ72N30X3 IXFH72N30X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 80 300 VGS = 10V 9V 8V 70 VGS = 10V 250 7V 9V 8V 200 50 I D - Amperes I D - Amperes 60 6V 40 30 150 7V 100 20 6V 50 5V 10 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 5 10 15 VDS - Volts 80 3.0 VGS = 10V 8V 30 VGS = 10V 2.6 RDS(on) - Normalized 7V 60 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 36A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 70 20 VDS - Volts 50 6V 40 30 5V 20 2.2 I D = 72A 1.8 I D = 36A 1.4 1.0 0.6 10 4V 0.2 0 0 4.5 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 36A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized -50 3 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 50 100 150 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 200 250 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP72N30X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFQ72N30X3 IXFH72N30X3 Fig. 8. Input Admittance 80 120 VDS = 10V 70 100 60 80 I D - Amperes I D - Amperes 50 40 30 60 o TJ = 125 C 40 o 25 C 20 o - 40 C 20 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 250 140 o TJ = - 40 C VDS = 10V 120 200 o 25 C I S - Amperes g f s - Siemens 100 80 o 125 C 60 150 100 40 o TJ = 125 C 50 o TJ = 25 C 20 0 0 0 20 40 60 80 100 120 0.4 140 0.5 0.6 0.7 0.8 I D - Amperes 0.9 1 1.1 1.2 1.3 1.4 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100,000 VDS = 150V I D = 36A I G = 10mA Capacitance - PicoFarads VGS - Volts 8 6 4 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 0 1 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFP72N30X3 IXFQ72N30X3 IXFH72N30X3 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 14 RDS(on) Limit 12 25μs I D - Amperes EOSS - MicroJoules 100 10 8 6 10 100μs 1 1ms 4 o TJ = 150 C 0.1 10ms DC o TC = 25 C Single Pulse 2 0 0.01 0 50 100 150 200 250 300 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_72N30X3(25-S301) 7-18-17 IXFP72N30X3 TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFQ72N30X3 IXFH72N30X3 IXFP72N30X3 IXFQ72N30X3 IXFH72N30X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved