IXTY02N50D-TRL

IXTY02N50D IXTU02N50D IXTP02N50D High Voltage Power MOSFET VDSX = =  ID25 RDS(on) 500V 200mA 30  D N-Channel TO-252 (IXTY) G G S S D (Tab) TO-251 (IXTU) Symbol Test Conditions VDSX TJ = 25C to 150C Maximum Ratings 500 V VDGX TJ = 25C to 150C 500 V VGSX Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJ 200 800 mA mA PD TC = 25C TA = 25C 25 1.1 W W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 0.35 0.40 3.00 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-251 TO-220 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = -10V, ID = 25A 500 VGS(off) VDS = 25V, ID = 25A - 2.5 IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = -10V RDS(on) VGS = 0V, ID = 50mA, Note 1 20 ID(on) VGS = 0V, VDS = 25V, Note 1 250 V - 5.0 V 100 nA 10 A 250 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 30  mA G D S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Low RDS(on) HDMOSTM Process • Rugged Polysilicon Gate Cell Structure • Fast Switching Speed Advantages • Easy to Mount • Space Savings • High Power Density Applications • • • • Level Shifting Triggers Solid State Relays Current Regulators DS98861C(5/17) IXTY02N50D Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 200mA, Note 1 100 Ciss Coss 150 mS 120 pF 25 pF 5 pF 9 ns 4 ns 28 ns 45 ns 0.50 5.0 C/W C/W VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf RthJC RthCS IXTU02N50D IXTP02N50D Resistive Switching Times VGS = 5V, VDS = 100V, ID = 50mA RG = 30 (External) TO-220 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 200mA, VGS = -10V, Note 1 trr IF = 750mA, -di/dt = 100A/s VR = 25V, VGS = -10V Characteristic Values Min. Typ. Max. 0.7 1.5 V 1.0 μs Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY02N50D TO-252 AA (IXTY) Outline TO-251 AA (IXTU) Outline 1. Gate; 2,4. Drain; 3. Source 1. Gate; 2,4. Drain; 3. Source © 2017 IXYS CORPORATION, All Rights Reserved IXTU02N50D IXTP02N50D TO-220 (IXTP) Outline 1. Gate; 2,4. Drain; 3. Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.