L236

Common Cathode Fast Recovery Epitaxial Diode (FRED) DSEK 60 IFAVM = 2x 30 A VRRM = 600 V trr = 35 ns VRSM V 640 VRRM V 600 Type TO-247 AD A C A DSEK 60-06A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 50 30 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s °C °C °C W Nm g Features q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behavior Epoxy meets UL 94V-0 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25°C Mounting torque Applications q q q 125 0.8...1.2 6 Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages q q Symbol Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 37 A; Characteristic Values typ. max. 100 50 7 1.4 1.6 1.01 7.1 1 0.25 70 mA mA mA V V V mW K/W K/W K/W ns A q IR VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM TVJ = 150°C TVJ = 25°C q q High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling VF VT0 rT RthJC RthCK RthJA trr IRM For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms L £ 0.05 mH; TVJ = 100°C 35 10 50 11 x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-2 036 DSEK 60, 600 V Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dim. A B C D E F G H J K Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 Dimensions M N L M N Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 2-2