DGS 4-025A DGSK 8-025A
DGS 3-025AS
Gallium Arsenide Schottky Rectifier
IFAV = 5.4 A VRRM = 250 V CJunction = 6.4 pF
Type
Marking on product
Circuit
Package
A = Anode, C = Cathode , TAB = Cathode
A
C
DGS 3-025AS
3A250AS
Single
A C
TO-252 AA
A A
C (TAB)
DGS 4-025A
DGS 4-025A
Single
TO-220 AC
C A C (TAB)
DGSK 8-025A
DGSK 8-025A
Common cathode
A C A
TO-220 AB
A C A
C (TAB)
Symbol VRRM/RSM IFAV IFAV IFSM TVJ Tstg Ptot Md
Conditions
Maximum Ratings 250 V A A A °C °C W Nm
Features • Low forward voltage • Very high switching speed • Low junction capacity of GaAs - low reverse current peak at turn off • Soft turn off • Temperature independent switching behaviour • High temperature operation capability • Epoxy meets UL 94V-0
TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine
5.4 3.9 10 -55...+175 -55...+150
TC = 25°C mounting torque (TO-220)
18 0.4...0.6
Applications • MHz switched mode power supplies (SMPs) • Small size SMPs • High frequency converters • Resonant converters
Symbol IR VF CJ RthJC RthCH Weight
Pulse test:
Conditions TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM I F = 2 A; I F = 2 A; TVJ = 125°C TVJ = 25°C
Characteristic Values typ. max. 0.7 0.7 1.3 1.3 6.4 8.5 1.6 mA mA V V pF K/W K/W g g
VR = 100 V; TVJ = 125°C
TO-220 TO-252 TO-220
Pulse Width = 5 ms, Duty Cycle < 2.0 %
0.5 0.3 2
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1-2
435
DGS 4-025A DGSK 8-025A
10 100 pF A 1
DGS 3-025AS
Outline TO-220
IF
CJ
TVJ = 125°C
0,1
TVJ = 125°C 25°C
10
0,01
0,001 0,0
0,5
1,0
1,5 VF
V 2,0
1 0,1
1
10
100 V 1000 VR
Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.38 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.015 0.022 0.090 0.110
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity versus blocking voltage
10 K/W 1 ZthJC
Single Pulse
0,1
Outlines TO-252
0,01
DGS3-025AS
0,00001
0,0001
0,001
0,01
0,1
1 t
s
10
Fig. 3 typ. thermal impedance junction to case
1 Anode 2 NC 3 Anode 4 Cathode
Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes:
Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3
conduction forward characteristics turn off characteristics
turn on characteristics
Rectifier Diode by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR
GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak
Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 0.89 2.54 1.02 1.27 2.92
Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040
435
IXYS reserves the right to change limits, test conditions and dimensions
0.025 0.035 0.100
0.040 0.050 0.115
© 2004 IXYS All rights reserved
2-2
很抱歉,暂时无法提供与“L680”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 100+0.00551
- 500+0.0052
- 1000+0.00473
- 5000+0.0041
- 10000+0.00373
- 国内价格
- 100+0.01231
- 500+0.01161
- 1000+0.01056
- 5000+0.00916
- 10000+0.00832
- 国内价格
- 5+0.425
- 20+0.3875
- 100+0.35
- 500+0.3125
- 1000+0.295
- 2000+0.2825
- 国内价格
- 50+0.13492
- 500+0.12143
- 5000+0.11244
- 10000+0.10794
- 30000+0.10344
- 50000+0.10074
- 国内价格
- 1+5.08199
- 10+4.61999
- 30+4.31199
- 100+3.84999
- 500+3.6344
- 1000+3.4804