CPC3714C

CPC3714 350V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 350VP 14 240mA SOT-89 Features • • • • • • Offers Low RDS(on) at Cold Temperatures RDS(on) 14 max. at 25ºC High Input Impedance High Breakdown Voltage: 350V Low VGS(off) Voltage: -1.6 to -3.9V Small Package Size: SOT-89 The CPC3714 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3714 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3714 offers a low, 14 maximum, on-state resistance at 25ºC. Applications • • • • • • Description Ignition Modules Normally-On Switches Solid State Relays Converters Telecommunications Power Supply The CPC3714 has a minimum breakdown voltage of 350VP and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3714CTR Description N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Circuit Symbol Package Pinout D D G G D S S (SOT-89) DS-CPC3714-R02 www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION CPC3714 Absolute Maximum Ratings @ 25 ºC Parameter Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Total Package Dissipation 1 Junction Temperature Operational Temperature Storage Temperature 1 Ratings 350 ±15 600 1.4 150 -55 to +125 -55 to +125 Units VP VP mA W ºC ºC ºC Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Mounted on FR4 board 1"x1"x0.062" Electrical Characteristics @ 25 ºC (Unless Otherwise Noted) Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSX VGS= -5V, ID=100µA 350 Gate-to-Source Off Voltage VGS(off) IDS= 5V, ID=1mA -1.6 Change in VGS(off) with Temperatures Min Typ Max Units - - VP - -3.9 V dVGS(off)/dT VDS= 5V, ID=1mA - - 4.5 mV/ºC Gate Body Leakage Current IGSS VGS=±15V, VDS=0V - - 100 nA Drain-to-Source Leakage Current ID(off) Change in RDS(on) with Temperatures - 1 A - 1 mA IDSS VGS= 0V, VDS=15V 240 - - mA RDS(on) VGS= 0V, ID=240mA - - 14  dRDS(on)/dT VGS= 0V, ID=240mA - - 1.1 %/ºC ID= 100mA, VDS = 10V 225 - - m 45 100 Forward Transconductance GFS Input Capacitance CISS Common Source Output Capacitance COSS Reverse Transfer Capacitance CRSS Turn-On Delay Time td(on) Rise Time VGS= -5V VDS= 25V f= 1MHz td(off) Fall time - tf 10 60 2 40 pF 20 VDD= 25V ID= 150mA VGS= 0V to -10V Rgen= 50 tr Turn-Off Delay Time -  Saturated Drain-to-Source Current Static Drain-to-Source ON-State Resistance VGS= -5V, VDS=350V VGS= -5V, VDS=280V, TA=125ºC - 10 - 20 ns 50 Source-Drain Diode Voltage Drop VSD VGS= -5V, ISD= 150mA - 0.6 1.8 V Thermal Resistance (Junction to Ambient) RJA - - 90 - ºC/W VDD Switching Waveform & Test Circuit RL 0V 90% PULSE GENERATOR INPUT -10V 10% t on t d(on) VDS OUTPUT Rgen t off tf t d(off) tr D.U.T. 90% 90% INPUT OUTPUT 0V 2 10% 10% www.ixysic.com R02 INTEGRATED CIRCUITS DIVISION CPC3714 PERFORMANCE DATA* 250 225 200 175 150 125 100 75 50 25 0 Transfer Characteristics (VDS=5V) -2.0 240 -2.5 +25ºC 200 -3.0 VGS(off) (V) VGS=-1.5V 160 +125ºC 120 80 VGS=-2.0V 1 2 3 VDS (V) 4 5 -4.0 -4.5 -5.0 0 -3.0 6 -2.5 RON vs. Temperature (VGS=0V, ID=100mA) -2.0 VGS (V) -1.5 -5.5 -1.0 1.4 15 1.2 9 50 100 Temperature (ºC) 150 -55ºC 250 +25ºC 1.0 200 +125ºC : 12 -0 300 GFS (m ) 1.6 18 Power (W) 21 -50 Transconductance vs. Drain Current (VDS=10V) Power Dissipation vs. Ambient Temperature 6 0.8 0.6 150 100 0.4 3 50 0.2 0 -50 -0 50 100 0 0.0 150 0 20 Temperature (ºC) 40 60 80 100 120 Ambient Temperature (ºC) 0 140 Capacitance vs. Drain Source Voltage (VGS=-5V) Max Rated Safe Operating Area 1 160 0.01 120 100 80 CISS 60 40 COSS 20 0.001 0.1 0 1 10 100 Drain-Source Voltage (V) 1000 RON (ȍ) Capacitance (pF) 0.1 CRSS 0 10 20 VDS (V) 30 40 10 20 30 40 50 60 ID (mA) 70 80 90 100 On-Resistance vs. Drain Current (VGS=0V) 140 Drain Current (A) -3.5 -40ºC 40 0 RON (:) VGS(off) vs. Temperature (VDS=10V, ID=1mA) 280 VGS=-1.0V VGS=0V ID (mA) ID (mA) Output Characteristics (TA=25ºC) 20 18 16 14 12 10 8 6 4 2 0 0 0.06 0.12 0.18 ID (A) 0.24 0.30 *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R02 www.ixysic.com 3 INTEGRATED CIRCUITS DIVISION CPC3714 Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033. Device Moisture Sensitivity Level (MSL) Rating CPC3714C MSL 1 ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Reflow Profile This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed. Device Maximum Temperature x Time CPC3714C 260ºC for 30 seconds Board Wash IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used. 4 www.ixysic.com R02 INTEGRATED CIRCUITS DIVISION CPC3714 MECHANICAL DIMENSIONS CPC3714C 1.626 / 1.829 (0.064 / 0.072) 1.397 / 1.600 (0.055 / 0.063) R 0.254 (R 0.010) PCB Land Pattern 1.90 (0.075) 3.937 / 4.242 (0.155 / 0.167) 45º 2.286 / 2.591 (0.090 / 0.102) 2.45 (0.096) 1.40 (0.055) Pin 1 0.889 / 1.194 (0.035 / 0.047) 0.356 / 0.483 (0.014 / 0.019) 0.432 / 0.559 (0.017 / 0.022) 50º 0.356 / 0.432 (0.014 / 0.017) 0.864 / 1.016 (0.034 / 0.040) 4.394 / 4.597 (0.173 / 0.181) 1.118 / 1.270 (0.044 / 0.050) 50º 5.00 (0.197) 1.90 (0.074) 0.432 / 0.508 (0.017 / 0.020) 0.60 (0.024) TYP 3 2.845 / 2.997 (0.112 / 0.118) 1.422 / 1.575 (0.056 / 0.062) 2.921 / 3.073 (0.115 / 0.121) Dimensions mm MIN / mm MAX (inches MIN / inches MAX) CPC3714CTR Tape & Reel 177.8 Dia (7.00 Dia) 5.50 ± 0.05 (0.217 ± 0.002) Top Cover Tape Thickness 0.102 Max (0.004 Max) 2.00 ± 0.05 (0.079 ± 0.002) 4.00 ± 0.1 (0.157 ± 0.004) W=12.00 ± 0.3 (0.472 ± 0.012) B0=4.60 ± 0.1 (0.181 ± 0.004) K0=1.80 ± 0.1 (0.071 ± 0.004) Embossed Carrier 1.75 ± 0.1 (0.069 ± 0.004) A0=4.80 ± 0.1 (0.189 ± 0.004) P=8.00 ± 0.1 (0.315 ± 0.004) Embossment Dimensions mm (inches) For additional information please visit our website at: www.ixysic.com IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. 5 Specification: DS-CPC3714-R02 ©Copyright 2014, IXYS Integrated Circuits Division All rights reserved. Printed in USA. 8/1/2014