CS19-08HO1

CS19-08ho1 High Efficiency Thyristor VRRM = 800 V I TAV = 20 A VT = 1.31 V Single Thyristor Part number CS19-08ho1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-220 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS19-08ho1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 800 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 50 µA 1 mA TVJ = 25°C 1.32 V 1.65 V 1.31 V IT = 20 A IT = 40 A IT = 20 A IT = 40 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 110 °C RthCH max. Unit 900 V VR/D = 800 V average forward current Ptot typ. VR/D = 800 V I TAV I²t min. 1.73 V T VJ = 125 °C 20 A 31 A TVJ = 125 °C 0.86 V 22 mΩ 0.7 K/W 0.5 K/W TC = 25°C 170 W t = 10 ms; (50 Hz), sine TVJ = 45°C 180 A t = 8,3 ms; (60 Hz), sine VR = 0 V 195 A t = 10 ms; (50 Hz), sine TVJ = 125 °C 155 A t = 8,3 ms; (60 Hz), sine VR = 0 V 165 A t = 10 ms; (50 Hz), sine TVJ = 45°C 160 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 160 A²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 120 A²s 115 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 230 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 9 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.15 A/µs; 60 A I G = 0.15 A; V = ⅔ VDRM 20 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current non-repet., I T = pF 5 W 2.5 W 0.5 W 150 A/µs 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.5 TVJ = -40 °C 2.5 V VD = 6 V TVJ = 25 °C 28 mA TVJ = -40 °C 50 mA TVJ = 150°C 0.2 V 3 mA TVJ = 25 °C 75 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.1 A; di G /dt = V 0.1 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 50 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.1 A; di G /dt = VR = 100 V; I T = 0.1 A/µs 20A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS19-08ho1 Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 125 °C -40 100 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip g 0.4 0.6 Nm 20 60 N Product Marking Part Number Logo Date Code Lot # XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number CS19-08ho1 Similar Part CS19-08ho1S CS19-12ho1 CS19-12ho1S Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) (2) TO-220AB (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Quantity 50 Code No. 471038 Voltage class 800 1200 1200 T VJ = 125°C Thyristor V 0 max threshold voltage 0.86 R0 max slope resistance * 19 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product CS19-08ho1 V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS19-08ho1 Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b 2x e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. C A2 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS19-08ho1 Thyristor 60 160 1000 50 Hz, 80% VRRM VR = 0 V 140 40 120 IT 2 It TVJ = 45°C ITSM 2 100 [A] 20 TVJ = 45°C 100 [A s] TVJ = 125°C [A] 125°C 150°C TVJ = 125°C 80 TVJ = 25°C 0 0,5 60 1,0 1,5 2,0 10 2,5 0,01 0,1 VT [V] Fig. 1 Forward characteristics 100 1 1 3 4 5 6 7 8 910 t [s] t [ms] Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 2 1000 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 2 40 dc = 1 0.5 0.4 0.33 0.17 0.08 30 10 100 VG 5 3 [µs] 1 1 IT(AV)M Limit 20 4 2 [V] typ. tgd 6 [A] 10 TVJ = 125°C 0,1 4: PGAV = 0.5 W 5: PGM = 2.5 W 6: PGM = 5 W IGD, TVJ = 125°C 1 10 100 1 10 1000 10 0 100 1000 0 25 IG [mA] IG [mA] 75 100 125 150 175 TC [°C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 50 Fig. 6 Max. forward current at case temperature 0,8 dc = 1 0.5 0.4 0.33 0.17 0.08 40 30 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 P(AV) 0,6 ZthJC 0,4 20 [K/W] [W] 0,2 10 0 0 10 20 IT(AV) [A] 0 50 100 0,0 100 150 Tamb [°C] © 2019 IXYS all rights reserved 102 ti [s] 0.10 0.08 0.01 0.0011 0.18 0.17 0.17 0.025 0.32 0.09 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 101 Rthi [K/W] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d CS19-08ho1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d