DSA70C150HB

DSA70C150HB Schottky Diode Gen ² VRRM = I FAV = 2x VF = 150 V 35 A 0.77 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA70C150HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200128c DSA70C150HB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 IR reverse current, drain current VR = 150 V TVJ = 25°C 680 µA VR = 150 V TVJ = 125°C 7.5 mA IF = 35 A TVJ = 25°C 0.90 V IF = 70 A 1.06 V IF = 35 A 0.77 V IF = 70 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 150 °C rectangular V 0.94 V T VJ = 175 °C 35 A TVJ = 175 °C 0.53 V 4.9 mΩ 0.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 150 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.3 TC = 25°C 24 V f = 1 MHz 215 600 226 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200128c DSA70C150HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D S A 70 C 150 HB IXYS Logo g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSA70C150HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA70C150HB * on die level Delivery Mode Tube Code No. 506708 T VJ = 175°C Schottky V 0 max threshold voltage 0.53 V R0 max slope resistance * 2.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128c DSA70C150HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b C b4 A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128c DSA70C150HB Schottky 70 100 1000 900 60 10 TVJ=175°C 50 150°C 700 125°C CT 600 800 1 IF 40 IR [A] 30 [mA] 0.1 100°C TVJ = 150°C 125°C 25°C 20 10 0.01 500 [pF] 400 75°C 300 50°C TVJ = 25°C 200 0.001 25°C 100 0 0.0 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 0 0 40 80 120 160 VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 0 40 80 120 160 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 40 60 50 DC 30 d = 0.5 40 P(AV) IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 20 30 [W] [A] 20 10 10 0 0 0 50 100 150 0 200 TC [°C] 10 20 30 40 50 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 0.8 0.7 Single Pulse 0.6 0.5 ZthJC 0.4 [K/W] 0.3 0.2 0.1 Note: All curves are per diode 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200128c