DSEC60-03A

DSEC 60-03A HiPerFREDTM Epitaxial Diode IFAV = 2x30 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 A Type C A TO-247 AD A C A DSEC 60-03A C (TAB) Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 145°C; rectangular, d = 0.5 IFSM A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A EAS TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH 1.2 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A -55...+175 175 -55...+150 °C °C °C TC = 25°C Md mounting torque Weight typical Symbol Conditions VF ② RthJC RthCH trr IRM fo ① 165 W 0.8...1.2 Nm IF = 30 A; g 10 1 TVJ = 150°C TVJ = 25°C IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 6 Characteristic Values typ. max. VR = VRRM; TVJ = 25°C TVJ = 150°C No t IR r Ptot ne w TVJ TVJM Tstg Features • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 de s 70 30 ig n A = Anode, C = Cathode 0.91 1.25 V V 0.9 K/W K/W 0.25 30 VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C µA mA ns 7 A Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0% ② Pulse Width = 300 µs, Duty Cycle < 2.0% IXYS reserves the right to change limits, Conditions and dimensions. © 2007 IXYS All rights reserved Recommended replacement: DPG 60C300HB DPG 60C300QB (TO-3P alternative) 20070605a Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEC 60-03A 60 800 30 TVJ = 100°C nC A VR = 150V 40 VR = 150V 25 600 IF TVJ = 100°C A IRM Qr 20 IF = 60A TVJ=150°C IF = 60A IF = 30A IF = 30A TVJ=100°C 400 IF = 15A 15 IF = 15A TVJ= 25°C 20 10 200 5 0.5 1.0 VF V 0 100 1.5 Fig. 1 Forward current IF versus VF 0 A/μs 1000 -diF/dt 0 90 de s trr VFR Kf TVJ = 100°C V VR = 150V 80 600 A/μs 800 1000 -diF/dt 14 TVJ = 100°C ns 1.2 400 Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 200 ig n 0 0.0 IF = 30A 70 IRM 80 w 0.4 0.2 120 °C 160 fo Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 200 400 600 800 1000 A/μs 0 200 400 -diF/dt 0.0 600 A/μs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Fig. 5 Recovery time trr versus -diF/dt Constants for ZthJC calculation: No t 1 8 r 40 TVJ 0.01 10 40 0 ZthJC IF = 15A 50 0.4 0.1 0.6 ne 0.6 tfr VFR IF = 30A 60 Qr K/W 0.8 IF = 60A 0.8 μs 1.0 tfr 12 1.0 1.2 i 1 2 3 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.005 0.0003 0.04 0.001 0.0001 0.00001 DSEP30-03A/DSEC 60-03A 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 t IXYS reserves the right to change limits, Conditions and dimensions. © 2007 IXYS All rights reserved 20070605a Fig. 7 Transient thermal resistance junction to case 2-2