IXFK25N90

HiPerFETTM Power MOSFETs IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 VDSS ID25 RDS(on) 900V 25A 330mΩ Ω 900V 26A 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 900 900 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V G ID25 IDM ID25 IDM TC TC TC TC 25N90 25N90 26N90 26N90 25 100 26 104 A A A A PLUS247 IA TC = 25°C 25N90 25 A 26N90 EAS TC = 25°C 26 3 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 560 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. z 20..120 /4.5..27 N/lb. z 10 6 g g z = 25°C = 25°C, pulse width limited by TJM = 25°C = 25°C, pulse width limited by TJM TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) FC Mounting force Weight TO-264 TO-247 (IXFX) D (TAB) S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z International standard packages Avalanche Rated Low package inductance Low RDS(ON) HDMOS Process Fast intrinsic diode Advantages z Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 900 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = 0.8 • VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION,All rights reserved TJ = 125°C 25N90 26N90 z z Easy to mount Space savings High power density V Applications: 5.0 V z ± 200 nA z 100 μA 2 mA z 330 mΩ 300 mΩ z z z Switched-mode and resonant-mode power supplies DC-DC Converters Battery chargers DC choppers AC motor drives Temperature & lighting controls DS9855D(12/08) IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 18 VDS= 10V, ID = 0.5 • ID25, Note 1 28 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-264 (IXFK) Outline S 8.7 10.8 nF 800 1000 pF 300 375 pF td(on) Resistive Switching Times 60 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 35 ns td(off) RG = 1Ω (External) 130 ns 24 ns 260 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 70 nC 100 nC RthJC 0.22 RthCS °C/W 0.15 Source-Drain Diode °C/W Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS ISM IS ISM VGS = 0V Repetitive, pulse width limited by TJM VGS = 0V Repetitive, pulse width limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = IS, -di/dt = 100A/μs VR = 100V, VGS = 0V 25N90 25N90 26N90 26N90 25 100 26 104 A A A A 1.5 V 250 ns μC A 1.4 10 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 b2 1.14 1.91 2.92 1.40 2.13 3.12 .045 .075 .115 .055 .084 .123 C D E 0.61 20.80 15.75 0.80 21.34 16.13 .024 .819 .620 .031 .840 .635 e 5.45 BSC .215 BSC L L1 19.81 3.81 20.32 4.32 .780 .150 .800 .170 Q R 5.59 4.32 6.20 4.83 .220 .170 0.244 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC 50 20 T J = 25°C V GS = 9V 8V 6V ID - Amperes ID - Amperes 40 7V 15 V GS = 9V 8V 7V T J = 25°C 5V 10 6V 30 20 5V 5 10 4V 4V 0 0 0 2 4 6 8 0 10 4 8 30 25 V GS = 9V 8V 7V 25 6V 5V 20 ID - Amperes T J = 125°C ID - Amperes 20 Figure 4. Admittance Curves Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 15 10 5 20 O T J = 125 C 15 O T J = 25 C 10 5 4V 0 0 0 5 10 15 20 2 25 3 4 V DS - Volts 2.4 5 6 7 V GS - Volts 6. R 0.5value ID25 Value 6. Fig. RDS(ON) Normalized to 0.5toID25 vs. Tvs. DS(on) Normalized J Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID Junction Temperature 2.4 2.4 V GS = 10V 2.2 2.2 2.0 RRDS(ON) - Normalized DS(on) - Normalized 2.2 RDS(ON) - Normalized 16 V CE - Volts V DS - Volts 30 12 T J = 125°C 1.8 1.6 1.4 T J = 25°C 1.2 V = 10V VGSGS = 10V 2.0 2.0 I D = 26A I D = 26A 1.8 1.8 I D = 13A 1.6 1.6 1.4 1.4 ID = 13A 1.2 1.2 1.0 1.0 1.0 0.8 0.8 0.8 0 10 20 30 ID - Amperes © 2008 IXYS CORPORATION,All rights reserved 40 50 25 25 50 50 75 100 125 75 100 125 Centigrade T J -TDegrees - Degrees C J 150 150 IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Figure 8. Capacitance Curves Figure 7. Gate Charge 20000 15 V DS = 500 V I D = 13 A I G = 10 mA Capacitance - pF VGS - Volts 12 Ciss 10000 9 6 f = 1MHz Coss 1000 3 Crss 100 0 0 50 100 150 200 250 300 0 350 5 10 15 20 25 30 35 40 100 125 150 V DS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode 50 30 IXFN26N90 45 25 40 IXFN25N90 30 ID - Amperes ID - Amperes 35 T J = 125 o C 25 20 T J = 25 o C 15 10 20 15 10 5 5 0 0.0 0.3 0.6 0.9 1.2 1.5 0 -50 -25 0 25 50 75 o V SD - Volts Case Temperatue - C 0.300 R(th)JC - K/W 0.100 0.010 0.001 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_26N90(9X)12-09-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.