IXFK35N50

HiPerFETTM Power MOSFETs IXFK33N50 IXFX35N50 VDSS ID25 33A 35A 500V N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr RDS(on)  160m  150m TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 500 500 V V VGSS VGSM Continuous Transient  20  30 V V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM 33 35 132 140 A A A A 33 2.5 A J 5 V/ns 416 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g G D S Maximum Ratings IA EAS TC = 25C TC = 25C dv/dt IS  IDM, VDD  VDSS, TJ  150C PD TC = 25C 33N50 35N50 33N50 35N50 TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features        International Standard Packages Avalanche Rated Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Molding epoxies meet UL 94 V-0 flammability classification Low RDS (on) HDMOSTM process Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA VDSS Temperature Coefficient 500 VGS(th) VDS = VGS, ID = 4mA VGS(th) Temperature Coefficient 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • IDSS, Note 1  V %/K 0.102 4.5 -0.206 200 V %/K nA 200 A 2 mA TJ = 125C © 2013 IXYS CORPORATION, All Rights Reserved  33N50 35N50 160 m 150 m High Power Density Easy to Mount Space Savings Applications       DC-DC Converters Battery Chargers Synchronous rectification Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS97517E(9/13) IXFK33N50 IXFX35N50 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • IDSS, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS RG = 1 (External) Qg(on) Qgs Characteristic Values Min. Typ. Max. 18 28 S 5200 5700 nF 640 750 pF 240 310 pF 35 42 110 23 45 50 140 35 ns ns ns ns 227 nC 29 nC 110 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd TO-264 Outline RthJC PINS: 1 - Gate 2,4 - Drain 3 - Source 0.30C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 33 A Repetitive, Pulse Width Limited by TJM 132 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM IF = IS, VGS = 0V QRM Note -di/dt = 100A/s VR = 100V 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 7 250 ns A 750 nC PLUS247TM Outline PINS: 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.